Abstract In this work, study was performed using Amorphous polymer – based composites consisting of polystyrene (PS) and carbon black (CB) . Five samples have been prepared with different weight percentage which are (0%CB+100%PS) , (5%CB+95%PS) , (15%CB+85%PS) , (25%CB+75%PS) and (35%CB+65%PS) . The electrical properties have been studied for these samples as follows : Electrical conductivity , relative dielectric constant and the dielectric loss tangent were measured at alternating electric field in temperature range between (30C°) and (60C°) and at four different constant frequencies (100HZ, 1KHZ, 10KHZ and 100KHZ ) . It is noted that the highest value of alternating electrical conductivity at (30C°) is for the sample of composition (25%CB+75%PS) which was (1.25x10 S/m ) and the highest value at temperature (60C°) was for same sample with value of (3.2x10 S/m ) , it should be noted that in general the electrical conductivity increases as the temperature increases where this result shows the behaviour of semiconductors. The relative dielectric constant in the pure sample (0%CB+100%PS) and the other samples with low percentage of carbon black increases as the temperature increases however it decreases as frequency increases. And the samples with higher percentage of carbon black which are (25%CB+75%PS) and (35%CB+65%PS) it was noted that the relative dielectric constant decreases as temperature increases. The lowest value was (1.26) at temperature (30C°) and frequency (10KHZ) for the sample with composition of (15%CB+85%PS), while the highest value at same temperature is (410.2) at (100HZ) for the sample with composition of (25%CB+75%PS), for the relative dielectric constant the highest result it was for the sample (5%CB+95%PS) at (607) at (100HZ) and (45C°). The dielectric loss tangent increases as the carbon black increases in all samples and it was found that the temperature influence will be at high percentage of the carbon black where the temperature of (55C°) the dielectric loss tangent increased to the highest value (1.2X10 ) for the sample of composition (35%CB+65%PS). at the high level of the carbon black it was found that the dielectric loss tangent decreases as the frequency increases.
عادل محمد التميمي (2013)

Thin films of pure ZnO have been prepared on glass substrate using the Sol–Gel spin coating technique. Transmittance and absorbance spectra have been measured by using double beam UV-Visible 1800 spectrophotometer in the wavelength range (300-800)nm. It was found that the absorbance decreases with increasing the wavelength, while the transmittance increases with rising the wavelength. The transmittance exceeds 90% in the visible light region and in the near-infrared. The obtained results have shown that intrinsic ZnO is a semiconductor of wide optical energy band gap estimated to be 3.33eV. Furthermore, some optical properties and optical constants have been calculated from absorption and transmission measurements such as absorption coefficient, Urbach energy, extinction coefficient, refractive index and dielectric constant. arabic 12 English 63
Fawzeia Khamis(8-2020)

تم في هذا البحث دراسة بعض الخصائص الكهربية و البصرية لسطح السليكون المتعدد البلورات(Poly-Crystalline Silicon) وذلك بعد معالجته بنبضات ليزر الياقوت (λ = 6943 A°, τ = 500 μsec., E ≈ 0.58 J/cm²) و بإستخدام تحليل نظري من خلال برنامج حاسوب تم حساب درجة حرارة سطح السليكون كمؤشر لتقدير طاقة النبضة الليزرية التي يمكن إستعمالها في معالجة السطح. أستخدمت مطيافة الأشعة تحت الحمراء (IR-Spectrophotometery) لتقصي ما يحدث من أكسدة على السطح. بزيادة كثافة طاقة النبضة الليزرية تم تتبع التشويه الناتج على سطح و مايحدث من إنصهار و تبخر و إمكانية إحداث ثقوب في شريحة السليكون عند معاملته بنبضة ليزرية بكثافة طاقة (E ≈ 1>7 J/cm²) و مدى إعتماد تجانس الثقب الناتج على موضعه بالنسبة لحدود الحبيبات (Grain Boundaries) على السطح. ولدراسة مدى إمكانية تحسن مواصفات سطح السليكون المعالج بالليزر تم تحضير نوعين من العينات على نفس الشريحة نصفها معالج بالليزر و النصف الأخر غير معالج و ذلك لغرض المقارنة. و تم تحضير ثنائيات شوتكي (Al-Si(poly)-Al) بتسيب طبقة من الألومنيوم على سطح الأمامي و الخلفي للسيلكون بإستخدام التبخير الحراري (Thermal Evaporation) مع إستخدام نبضة ليزر الياقوت بكثافة طاقة (E ≈ 1.0 J/cm²) لصنع الوصلة الأومية (Ohmic Contact) وذلك بدلا من إيتخدام التسخين الحراري التقليدي. ثم قياس الخصائص الكهربية لهذه الثنائيات و هي [Ideality Factor(n), Barrier Height (ϕв), Reverse Saturation Current (Js)] و مقارنتها بثنائيات شوتكي المصنعة على سطح الغير معالج ليزريا التي تعمل كحاجز إلكتروستاتيكي لحاملات الشحن الأقلية (Minority Charge Carriers) مما يؤدي الي زيادة تيار التشبع العكسي و البتالي تقل كفاءة ثنائيات شوتكي المصنعة على هذا السطح. أخيرا يمكن إستخدام نبضة ليزر الياقوت ذو الطاقة العالية في عملية ثقب شريحة السليكون المتعدد البلورات و مدى تجانس الثقب الحادث يحدده موضعه بالنسبة لحدود الحبيبات فكلما بعدت الثقوب عن مناطق حدود الحبيبات كلما كانت أكثر تناسقا في الشكل. Abstract In this work, the poly-crystalline silicon surface was mechanically polished, chemically cleaned and then treated with ruby laser (λ = 6943 A°, τ = 500 μsec., E ≈ 0.58 J/cm²) of energy density from 0.58 J/cm2 . The temperature profile of the treated surface was estimated using numerical analysis of the heat flow equation. IR-spectra is used to diagnose the treated surface for any oxidation. Laser pulse of energy density higher than 0.58 J/cm20 caused a damage on the surface. The energy density of 1.7 J/cm2 resulted in small holes in poly-Si wafers, the homogeneousity of the hole shape depends on its relative position with respect to the grain boundaries. Al-Si(poly)-Al Schottky diodes were prepared on laser treated surface, and compared with those prepared on the untreated one. The diode’s parameters, such as, ideality factor n, barrier height ϕв, and reverse saturation current Js, were determined and discussed. Generally, it was found that the laser treatment of poly-Si surface improved the schottky diode parameters.
طارق عاشور (1996)